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 <h3>HANDBOOK of METAL ETCHANTS - Paglione Research Group</h3><p>Titanium. 1251. Titanium Alloys. 1260. Titanium Carbide. 1261. Titanium Dioxide. 1263  This includes wet chemical etching (WCE)  liquid solutions;.</p>

HANDBOOK of METAL ETCHANTS - Paglione Research Group

Titanium. 1251. Titanium Alloys. 1260. Titanium Carbide. 1261. Titanium Dioxide. 1263 This includes wet chemical etching (WCE) liquid solutions;.

 <h3>Wet-chemical Etching of Aluminium, Gold  - MicroChemicals</h3><p>Titanium, chromium and silver are not noticeably etched, precious metals such as gold  Wet chemical etching of gold therefore requires a strong oxidiser for the</p>

Wet-chemical Etching of Aluminium, Gold - MicroChemicals

Titanium, chromium and silver are not noticeably etched, precious metals such as gold Wet chemical etching of gold therefore requires a strong oxidiser for the

 <h3>Etch Rates for Micromachining ProcessingPart II - Penn Engineering</h3><p>10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum. Etchant Type A, titanium wet etchant, CR-7 chromium etchant,. CR-14 chromium etchant,</p>

Etch Rates for Micromachining ProcessingPart II - Penn Engineering

10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum. Etchant Type A, titanium wet etchant, CR-7 chromium etchant,. CR-14 chromium etchant,

 <h3>Titanium silicide etching in sub-half-micron device technology</h3><p>The selective wet chemical stripping of unreacted titanium and/or titanium  have the most impact on the etching rates of the titanium nitride and titanium silicide.</p>

Titanium silicide etching in sub-half-micron device technology

The selective wet chemical stripping of unreacted titanium and/or titanium have the most impact on the etching rates of the titanium nitride and titanium silicide.

 <h3>Wet Etch for Microelectronics Dr. Lynn Fuller - RIT - People</h3><p>Apr 10, 2008  Microelectronic Engineering. OUTLINE. Wet Etch Basics. Etching of Oxide. Etching of Nitride. Etching of Silicon. Etching of Metals. RCA Clean.</p>

Wet Etch for Microelectronics Dr. Lynn Fuller - RIT - People

Apr 10, 2008 Microelectronic Engineering. OUTLINE. Wet Etch Basics. Etching of Oxide. Etching of Nitride. Etching of Silicon. Etching of Metals. RCA Clean.

 <h3>Fundamental Studies in Selective Wet Etching and  - AIChE Engage</h3><p>Jan 1, 2010  etch/clean formulation for selective titanium etching. The introduction .. CHAPTER 5 Selective Titanium Wet Etch/Clean Chemical Formulation.</p>

Fundamental Studies in Selective Wet Etching and - AIChE Engage

Jan 1, 2010 etch/clean formulation for selective titanium etching. The introduction .. CHAPTER 5 Selective Titanium Wet Etch/Clean Chemical Formulation.

 <h3>Titanium wet etch: View - MEMS Exchange</h3><p>Equipment, wet bench I (acid bench). Equipment characteristics: Batch sizes, 100 mm: 12, 125 mm: 12, 150 mm: 12. MOS clean, no. Piece dimension. Range of</p>

Titanium wet etch: View - MEMS Exchange

Equipment, wet bench I (acid bench). Equipment characteristics: Batch sizes, 100 mm: 12, 125 mm: 12, 150 mm: 12. MOS clean, no. Piece dimension. Range of

 <h3>Wet-chemical Etching of Aluminium, Gold  - MicroChemicals</h3><p>Titanium, chromium and silver are not noticeably etched, precious metals such as gold  Wet chemical etching of gold therefore requires a strong oxidiser for the</p>

Wet-chemical Etching of Aluminium, Gold - MicroChemicals

Titanium, chromium and silver are not noticeably etched, precious metals such as gold Wet chemical etching of gold therefore requires a strong oxidiser for the

 <h3>Etching Titanium with HF and Nitric Acid Solutions Part 1 - Chemcut</h3><p>Chemcut decided to study the effects of etching titanium using this solution. Hydrofluoric acid (HF) is the primary chemical needed to etch titanium. The etching</p>

Etching Titanium with HF and Nitric Acid Solutions Part 1 - Chemcut

Chemcut decided to study the effects of etching titanium using this solution. Hydrofluoric acid (HF) is the primary chemical needed to etch titanium. The etching

 <h3>272 STUDY OF SELECTIVE WET ETCHING OF TITANIUM </h3><p>STUDY OF SELECTIVE WET ETCHING OF TITANIUM TOWARDS COPPER IN. HYDROFLUORIC FREE ETCHANT. Volha Matylitskaya, Stefan Partel, Stephan</p>

272 STUDY OF SELECTIVE WET ETCHING OF TITANIUM

STUDY OF SELECTIVE WET ETCHING OF TITANIUM TOWARDS COPPER IN. HYDROFLUORIC FREE ETCHANT. Volha Matylitskaya, Stefan Partel, Stephan

 <h3>Fundamental Studies in Selective Wet Etching and  - AIChE Engage</h3><p>Jan 1, 2010  etch/clean formulation for selective titanium etching. The introduction .. CHAPTER 5 Selective Titanium Wet Etch/Clean Chemical Formulation.</p>

Fundamental Studies in Selective Wet Etching and - AIChE Engage

Jan 1, 2010 etch/clean formulation for selective titanium etching. The introduction .. CHAPTER 5 Selective Titanium Wet Etch/Clean Chemical Formulation.

 <h3>Wet etching - an overview ScienceDirect Topics</h3><p>The wet etching process is either isotropic (orientation independent) or .. The chemical stability of titanium dioxide limits the number of solutions that can be</p>

Wet etching - an overview ScienceDirect Topics

The wet etching process is either isotropic (orientation independent) or .. The chemical stability of titanium dioxide limits the number of solutions that can be

 <h3>Etching Titanium with HF and Nitric Acid Solutions Part 1 - Chemcut</h3><p>Chemcut decided to study the effects of etching titanium using this solution. Hydrofluoric acid (HF) is the primary chemical needed to etch titanium. The etching</p>

Etching Titanium with HF and Nitric Acid Solutions Part 1 - Chemcut

Chemcut decided to study the effects of etching titanium using this solution. Hydrofluoric acid (HF) is the primary chemical needed to etch titanium. The etching

 <h3>Titanium Etchants Transene</h3><p>Excellent resolution, photo resist compatibility, and minimal undercutting are readily achieved. Titanium Etchant TFTN. Intended for etching Ti films deposited on</p>

Titanium Etchants Transene

Excellent resolution, photo resist compatibility, and minimal undercutting are readily achieved. Titanium Etchant TFTN. Intended for etching Ti films deposited on

 <h3>Metal Etching</h3><p>Wet Chemical Etching  Titanium etch 2 (1:9 HF:H2O) 5s/micron@32C (really that fast??) note: Titanium etch for 1 min sputtering 160W: 35s in 1%HF in DI.</p>

Metal Etching

Wet Chemical Etching Titanium etch 2 (1:9 HF:H2O) 5s/[email protected] (really that fast??) note: Titanium etch for 1 min sputtering 160W: 35s in 1%HF in DI.

 <h3>Titanium Etching</h3><p>Dec 8, 2009  Titanium Etching. Standard Operating Procedure. Faculty Supervisor: Prof. Robert White, Mechanical Engineering (x72210). Safety Office:</p>

Titanium Etching

Dec 8, 2009 Titanium Etching. Standard Operating Procedure. Faculty Supervisor: Prof. Robert White, Mechanical Engineering (x72210). Safety Office:

 <h3>Etch Rates for Micromachining ProcessingPart II - Penn Engineering</h3><p>10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum. Etchant Type A, titanium wet etchant, CR-7 chromium etchant,. CR-14 chromium etchant,</p>

Etch Rates for Micromachining ProcessingPart II - Penn Engineering

10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum. Etchant Type A, titanium wet etchant, CR-7 chromium etchant,. CR-14 chromium etchant,

 <h3>Etching titanium without Hydrofluoric acid - Finishing</h3><p>I am working with the Titanium alloys especially Ti-6Al-4V. Earlier I used 50% Hydrofluoric acid to etch Ti-6Al-4V, but now I wanted to replace it with some other</p>

Etching titanium without Hydrofluoric acid - Finishing

I am working with the Titanium alloys especially Ti-6Al-4V. Earlier I used 50% Hydrofluoric acid to etch Ti-6Al-4V, but now I wanted to replace it with some other

 <h3>Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium </h3><p>Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate</p>

Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium

Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate

 <h3>Selective Isotropic Wet Etching of TiN and TaN for  - IEEE Xplore</h3><p>removal of thin (10-30A) titanium nitride (TiN) diffusion blocking layers during the "replacement" process after the poly. Si layer is removed. An etch rate study</p>

Selective Isotropic Wet Etching of TiN and TaN for - IEEE Xplore

removal of thin (10-30A) titanium nitride (TiN) diffusion blocking layers during the "replacement" process after the poly. Si layer is removed. An etch rate study

 <h3>Titanium - MIT</h3><p>Feb 4, 2004  C O'Mahony, M Hill, P J Hughes and W A Lane , Titanium as a . Titanium wet etch: 20 H2O : 1 H2O2 :1 HF wet sink @ ~20C, etch rate: 1100</p>

Titanium - MIT

Feb 4, 2004 C O'Mahony, M Hill, P J Hughes and W A Lane , Titanium as a . Titanium wet etch: 20 H2O : 1 H2O2 :1 HF wet sink @ ~20C, etch rate: 1100

 <h3>Mask-Patterned Wet Etching of Thin Titanium  - ECS Transactions</h3><p>Mask-Patterned Wet Etching of Thin Titanium Liquid/Gas Diffusion Layers for a PEMEC  study, a set of well-tunable and titanium thin-film liquid/gas diffusion.</p>

Mask-Patterned Wet Etching of Thin Titanium - ECS Transactions

Mask-Patterned Wet Etching of Thin Titanium Liquid/Gas Diffusion Layers for a PEMEC study, a set of well-tunable and titanium thin-film liquid/gas diffusion.

 <h3>Titanium Etchants Transene</h3><p>Excellent resolution, photo resist compatibility, and minimal undercutting are readily achieved. Titanium Etchant TFTN. Intended for etching Ti films deposited on</p>

Titanium Etchants Transene

Excellent resolution, photo resist compatibility, and minimal undercutting are readily achieved. Titanium Etchant TFTN. Intended for etching Ti films deposited on

 <h3>Titanium Etching</h3><p>Dec 8, 2009  Titanium Etching. Standard Operating Procedure. Faculty Supervisor: Prof. Robert White, Mechanical Engineering (x72210). Safety Office:</p>

Titanium Etching

Dec 8, 2009 Titanium Etching. Standard Operating Procedure. Faculty Supervisor: Prof. Robert White, Mechanical Engineering (x72210). Safety Office:

 <h3>Wet Chemical Etching of Alignment V-Grooves in (100  - CiteSeerX</h3><p>through Titanium or In0.s3Ga0.47As Masks. R. Klockenbrink, E. Peiner,  For the fabrication of V- grooves wet chemical etching is very promising because of.</p>

Wet Chemical Etching of Alignment V-Grooves in (100 - CiteSeerX

through Titanium or In0.s3Ga0.47As Masks. R. Klockenbrink, E. Peiner, For the fabrication of V- grooves wet chemical etching is very promising because of.

 <h3>Etch Processing Solutions - MEI LLC</h3><p>Advanced Wet Etch; Gold Etch; Aluminum Etch; Copper Etch; Buffered Oxide Etch; Surface Oxide Etch; Titanium Strip; InGaP Etch GaAs Etch Process; KOH Etch</p>

Etch Processing Solutions - MEI LLC

Advanced Wet Etch; Gold Etch; Aluminum Etch; Copper Etch; Buffered Oxide Etch; Surface Oxide Etch; Titanium Strip; InGaP Etch GaAs Etch Process; KOH Etch

 <h3>Etch Rates for Micromachining Processing - Utah Nanofab</h3><p>Jan 2, 2009  silicon nitride, aluminum, tungsten, titanium, TVW alloy, and two brands of  layer in micromachining, wet etching has the disadvantage of.</p>

Etch Rates for Micromachining Processing - Utah Nanofab

Jan 2, 2009 silicon nitride, aluminum, tungsten, titanium, TVW alloy, and two brands of layer in micromachining, wet etching has the disadvantage of.

 <h3>Does anyone know how to etch the Titanium dioxide (TiO2) from</h3><p>Even I need to etch TiO2, but I am looking for anisotropic etch. Can anybody suggest me, which one is better whether dry etching or wet etching in case of TiO2</p>

Does anyone know how to etch the Titanium dioxide (TiO2) from

Even I need to etch TiO2, but I am looking for anisotropic etch. Can anybody suggest me, which one is better whether dry etching or wet etching in case of TiO2

 <h3>Titanium - MIT</h3><p>Feb 4, 2004  C O'Mahony, M Hill, P J Hughes and W A Lane , Titanium as a . Titanium wet etch: 20 H2O : 1 H2O2 :1 HF wet sink @ ~20C, etch rate: 1100</p>

Titanium - MIT

Feb 4, 2004 C O'Mahony, M Hill, P J Hughes and W A Lane , Titanium as a . Titanium wet etch: 20 H2O : 1 H2O2 :1 HF wet sink @ ~20C, etch rate: 1100

 <h3>Surface Preparation & Wet Processing - ERC - University of Arizona</h3><p>Wet Etch Solutions. HF and Buffered Oxide Etchant - oxide etch. Phosphoric Acid - nitride etch. Nitric Acid and HF - polysilicon etch. Selective metal etches.</p>

Surface Preparation & Wet Processing - ERC - University of Arizona

Wet Etch Solutions. HF and Buffered Oxide Etchant - oxide etch. Phosphoric Acid - nitride etch. Nitric Acid and HF - polysilicon etch. Selective metal etches.